Abstract
In this paper, we describe our study of the relationship between the layer profile of SiO2 and the characteristics of surface acoustic wave (SAW) devices in the SiO2/Al/LiTaO3 system. SiO2 coating is a well-known technology to improve the temperature coefficient of frequency (TCF) of a SAW filter, but the characteristics of the SAW filter deteriorate simultaneously. In this study, we focus on the SiO2 layer profile as one of the causes of this deterioration and try to improve the characteristics of the SAW filter with the SiO2/Al/LiTaO3 structure by changing the SiO2 layer profile. The relationship between the layer profile and the characteristics of SAW resonators has been investigated by finite element method (FEM)/spectrum domain analysis (SDA). To confirm the simulation results, we fabricated several SAW resonators with different profiles of the SiO2 layer by changing deposition conditions. As a result, the simulation results were in good agreement with the experimental results, and the enhanced characteristics of the SAW resonator and filter with a low insertion loss, a steep skirt characteristic, and a low TCF of approximately -15 ppm/K have been realized.
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