Abstract
The etching mechanism of the interface in plasmas is studied by two complementary spectroscopies, x‐ray photoelectron spectroscopy (XPS) and x‐ray photoelectron diffraction (XPD). Following the removal of the layer, the etching reaction is shown to be rate‐limited by the formation of a highly fluorinated gallium layer. The total fluoride thickness grows very slowly with increased plasma exposure. Elemental arsenic located between the gallium fluoride layer and the (001) substrate is also observed in the XPS spectra. The plasma etching reaction produces some structural damage within the lattice. The thickness of the damaged layer is estimated using a homogeneous multilayer model and the XPD patterns. After annealing at 400°C, elemental As is removed and the structural damage is reduced.
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