Study of Random Telegraph Signals in Single-Walled Carbon Nanotube Field Effect Transistors

Abstract

Random telegraph signals (RTSs) are observed in the single-walled carbon nanotube (SWNT) field-effect transistors. The RTS mechanism is studied in detail. It is shown that trapping/detrapping due to the defects in the oxide is the main reason for RTSs in the carbon nanotube field-effect transistors (CNT-FETs). The amplitude of the RTSs in CNT-FETs is mainly attributed to mobility modulation. The defect causing the RTSs is a hole-type Coulomb repulsive center located near the valance band of the SWNT.