Abstract
Abstract : Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic (I2L) LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress and/or pulsed ionizing radiation exposure. No significant synergistic effects were observed.
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