Abstract
Results from a study on the radiation hardness of multi-pixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from five manufacturers (Hamamatsu (Japan), CPTA/Photonique (Russia/Switzerland), Zecotek (Singapore), Pulsar (Russia) and FBK-IRST (Italy)) were exposed to 82 MeV protons at fluences up to 10 10 protons/cm 2 at the Paul Scherrer Institute. The G-APD's main parameters were measured before and after irradiation. The effects of the proton radiation on breakdown voltage, quenching resistance value, gain, photon detection efficiency, dark current and dark count rate for these devices are shown and discussed.
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