Abstract
The growth of silicon nanocrystals in high pressure and high dilution silane plasmas is investigated by using the temporal evolution of the self-bias on the radio frequency electrode and transmission electron microscopy. A square-wave-modulated plasma was used in order to control the growth of monodispersed nanoparticles with sizes smaller than 12nm. To this end, the plasma on time was kept below 1s. The radial growth rate of nanoparticles was varied in the range from 7.5to75nm∕s by changing silane partial pressure. Nanoparticles grown in silane-helium discharges have been found amorphous while they are crystalline in silane-hydrogen-argon discharges. Surprisingly, the crystallization in the gaseous phase does not depend on how slow or fast the particles grow but on the presence of atomic hydrogen.
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