Abstract
The DC and low frequency AC characteristics of the punch-through (PT) conduction have been examined in MOSFETs with different channel width/length ratios, fabricated on high resistivity Si substrates. The experimental results can be fitted by an analytical model deriving from a previous one developed for BARRITT devices. The modifications on the PT conduction induced by high dose neutron irradiation have been studied at various temperatures. The effects due to the radiation induced deep levels cannot be easily taken into account into the DC model, but can still be interpreted by using the AC model of the device. >
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