Abstract
In the fabrication of SiC high-temperature sensors, the phosphosilicate glass film (PSG) is deposited on the SiC wafer as the intermediate layer, achieving the bonding of two SiC wafers. The ease of bonding is affected by the PSG film thickness uniformity. In this paper, the flow field distribution in the LPCVD tube is simulated under different deposition conditions,obtaining the wafer surface uniformity of gas flow distribution, which was verified by the experiment, The aim of this work is to study the impact of several deposition conditions such as the location of SiC wafers, wafer inclination and wafer spacing on the thickness uniformity of PSG film. Experimental results show that SiC wafer position in the tube and its own inclination and wafer spacing affect gas flow field on the SiC wafer surface,leading to uneven distribution of gas flow, thus affect the thickness uniformity of PSG.
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