Abstract
In this research, we experimentally and numerically demonstrate the beneficial effect of superficial porous silicon layer in the optoelectronics properties of multi-crystalline silicon. The hydrogen and oxygen-rich porous silicon layer was formed using vapor etching method. From laser beam induced current (LBIC) simulations, we found that the hydrogen and oxygen-rich porous silicon layer used in mc-Si surface acts as a good surface passivation and a potential candidate for electronic quality and optoelectronics properties improvement. As a result, the generated current of treated silicon is 5 times greater as compared to reference substrate, which led to a 50% increase of the minority carrier diffusion length, 25% decrease in the recombination velocity of the minority carrier and the reflectivity reduced from 38 to 3% of the related sample.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Phosphorus, Sulfur, and Silicon and the Related Elements
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
