Abstract
In this research, we experimentally and numerically demonstrate the beneficial effect of superficial porous silicon layer in the optoelectronics properties of multi-crystalline silicon. The hydrogen and oxygen-rich porous silicon layer was formed using vapor etching method. From laser beam induced current (LBIC) simulations, we found that the hydrogen and oxygen-rich porous silicon layer used in mc-Si surface acts as a good surface passivation and a potential candidate for electronic quality and optoelectronics properties improvement. As a result, the generated current of treated silicon is 5 times greater as compared to reference substrate, which led to a 50% increase of the minority carrier diffusion length, 25% decrease in the recombination velocity of the minority carrier and the reflectivity reduced from 38 to 3% of the related sample.
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