Abstract
Crystallite size in polycrystalline diamond layers with a grain size exceeding 3 μm are determined by the X-ray topography method with the use of a divergent beam from a point source. For layers with thicknesses in the range 80–700 μm deposited in SHF plasma and 1–40 μm obtained by the method of a hot filament, the size distribution of crystallites is obtained. Asterism of some spots on X-ray diffraction patterns from the diamond layers with thicknesses exceeding 100 μm showed plastic deformation of individual crystallites. The parameters of deep levels in the band gap of undoped high-resistance diamond layers and the acceptor-type defects with an activation energy higher than 1 eV are determined by the method of charge relaxation spectroscopy.
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