Abstract
We report results of the characterization of the plasma - surface interactions of silicon and silicon dioxide in fluorocarbon discharges using real-time ellipsometry and post-plasma multi-technique surface analysis for chemical dry etching (CDE) and high-density plasma etching (HDPE). We show that changes of the gas composition in CDE causes major changes in silicon surface chemistry and etching behaviour. For low-pressure HDPE we investigate the influence of power deposition into the discharge and bias voltage and bias power at the wafer on the surface chemical changes of silicon and .
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