Abstract
We report results of the characterization of the plasma - surface interactions of silicon and silicon dioxide in fluorocarbon discharges using real-time ellipsometry and post-plasma multi-technique surface analysis for chemical dry etching (CDE) and high-density plasma etching (HDPE). We show that changes of the gas composition in CDE causes major changes in silicon surface chemistry and etching behaviour. For low-pressure HDPE we investigate the influence of power deposition into the discharge and bias voltage and bias power at the wafer on the surface chemical changes of silicon and .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
