Abstract

ABSTRACTPhotoluminescence in porous silicon on sapphire (SOS) prepared through chemical staining and photo-initiated chemical etch is demonstrated. SOS consists of single crystal quality material on a transparent substrate through which photoluminescence can be excited and observed. Porous silicon films as thin as 270 nm are shown to photoluminesce. This study explores the effect of varying film thickness and crystal quality on the photoluminescent emission from porous silicon. Introduction of crystal defects by ion implantation is used to create controlled damaged layers prior to fabricating porous silicon. No photoluminescence is observed from chemically stained or electrochemically etched amorphized layers. Corroborative results are obtained using LPCVD deposited amorphous silicon layers.

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