Abstract
In this work chemical vapor sensors for Ethanol, chloroform and n-Hexane were fabricated by porous silicon (PS). PS samples were prepared by electrochemical etching (ECE) method with different current density J = 2, 4 and 6 mA/cm2 and etching time 15 min and HF concentration 15%. Ordered porous silicon p-type (111) is thoroughly studied as an The structure, chemical composition and surface bond configuration of PS layer has been characterized by X-ray diffraction (XRD), Atomic Force Microscopic (AFM) and a Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence (PL) quenching measurement were conducted using mixture nitrogen gas and vapor of n-Hexane, chloroform and ethanol, where prepared to test the sensor response towards the chemical organic solvents. The results refer to the PS surface is good sensing for chemical vapor. It's were also found that a higher PL quenching value for Ethanol compared with the value of n-Hexane and chloroform vapors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
