Study of phonons in self-organized multiple Ge quantum dots

Abstract

Raman scattering measurements were carried out in a self-organized multi-layered Ge quantum dot sample, which was grown using solid-source molecular-beam epitaxy, and consisted of 25 periods of 20-A-high Ge quantum dots sandwiched by 20-nm Si spacers. The Ge-Ge optical phonon mode was found at 298.2 cm−1, which was tuned by the phonon confinement and strain effects. Acoustic phonons related to Ge quantum dots have also been demonstrated.