Abstract
We report the post-growth thermal annealing and the subsequent phase transition of Ga2O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900 °C under N2 ambience, by either in situ or ex situ thermal annealing, can induce phase transition from nominally metastable κ- to thermodynamically stable β-phase. This was analyzed by structural characterizations such as high-resolution scanning transmission electron microscopy and x-ray diffraction. The highly resistive as-grown Ga2O3 epitaxial layer becomes conductive after annealing at 1000 °C. Furthermore, we demonstrate that in situ annealing can lead to a crack-free β-Ga2O3.
Highlights
Growing attention has been given to gallium oxide (Ga2O3) due to its potential for realizing generation ultra-wide band gap (UWBG) electronic/optoelectronic device applications such as high-power transistors or UV solar blind photodetectors (SBPD)
Bandgap engineering within UVC solar blind band (200–280 nm) has been reported by alloying with other elements such as indium, aluminum, or magnesium [3,4,5]. These unique properties, together with the recent advent of commercially available single crystal substrates by melt growth method, have drawn considerable interest in utilizing β-Ga2O3 in a number of important technological applications from transparent electrodes, thin film transistors, and gas sensors to solar blind photodetectors and LEDs emitting in UVC band [6]
In a recent report [18], we have shown that a stabilized κ-Ga2O3 can be formed on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD) process
Summary
Growing attention has been given to gallium oxide (Ga2O3) due to its potential for realizing generation ultra-wide band gap (UWBG) electronic/optoelectronic device applications such as high-power transistors or UV solar blind photodetectors (SBPD). Study of Phase Transition in MOCVD Grown Ga2O3 from κ to β Phase by Ex Situ and In Situ Annealing. These unique properties, together with the recent advent of commercially available single crystal substrates by melt growth method, have drawn considerable interest in utilizing β-Ga2O3 in a number of important technological applications from transparent electrodes, thin film transistors, and gas sensors to solar blind photodetectors and LEDs emitting in UVC band [6].
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