Abstract
Positron beam studies on the silicidation in Pd/Si, Ni/Si and Co implanted Si thin film systems are presented. In the case of Pd/Si, the evidence for the occurrence of divacancies across the Pd2Si/Si interface consequent to Pd2Si formation is shown. In Ni/Si system, the identification of a multitude of silicide phases of Ni2Si, NiSi and NiSi2 is obtained from depth-resolved S-parameter, which is corroborated with GIXRD and AES results. In the case of the Co implanted Si, the recrystallization of amorphized silicon and the formation of CoSi2 precipitates in Si are brought out clearly.
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