Abstract
We investigate here the electrical and structural properties of PbTe layers doped with BaF2. The layers were grown on (111) BaF2 substrates by molecular beam epitaxy. The nominal doping level, defined as the beam flux ratio between BaF2 and PbTe, was varied from 0.02 to 1%. The hole concentration increases monotonously from 5×1017 to 1×1019 cm−3 as the doping level is raised from 0.02 to 0.4%, and saturates at p ∼1019 cm−3 for higher doping levels. This result demonstrates that PbTe can be effectively p‐type doped with BaF2. Even for the highest doping levels, the PbTe layers remained with a good structural quality, as evidenced by the (222) x‐ray rocking curves.
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