Abstract
x)BaTiO3-xPZT(65/35) ceramics were prepared by high temperature solid state reaction technique. Structural properties of the compounds were examined using an X-ray diffraction (XRD) technique to confirm the formation of phase at room temperature. Detailed studies of dielectric properties of (1−x) BaTiO3-xPZT(65/35) for all compositions were in temperature range 30- 200 o C reveal that the compound have transition temperature well above at the room temperature. While pure BaTiO3 ceramics exhibited a sharp phase transformation expected for normal ferroelectrics, phase transformation behavior of the (1−x) BaTiO3-xPZT(65/35) solid solutions became more diffuse with increasing PZT(65/35) contents. The diffusivity of the dielectric peaks in the compound exhibited the values between 1 and 2 where the higher value indicates the greater disorder in the systems. This was primarily evidenced by an increased broadness in the dielectric peak, with a maximum peak width occurring at x = 0.5. The temperature dependence of ac conductivity indicated that the electrical conductivity decrease above T C on increasing the PZT(65/35) contents. This increase in the conductivity is attributed to the increase in polarizability of the materials around Tc, due to oxygen vacancies. Copyright © 2011 VBRI press.
Highlights
There has been considerable interest in the solid solutions of BT-PZT(65/35) with a perovskite ABO3 type (A = mono or divalent, B = tri or hexavalent ion) structure due to its possible fore front application in the area of research as well as industrial application [1,2,3,4,5,6]
Barium titanate is a normal ferroelectric with a high dielectric constant and a relatively low TC (~120 0C), lead zirconate titanate has a higher TC of 390 0C which allows PZT(65/35) based piezoelectric devices to be operated at relatively higher temperatures [10]
This observation suggests that 0.7BT–0.3PZT composition may lead to a diffuse morphotropic phase boundary (MPB) between the tetragonal and rhombohedral PZT phases
Summary
Arun Chamola was born in Agastyamuni, Uttarakhand, India in 1974 He received the B.Sc. and M.Sc. degrees from H.N.B. Garhwal University, Srinagar, Uttarakhand, India in 1993 and. Hemant Singh was born in Uttarkashi, India in 1976 He received the B.Sc. degree from H.N.B. Garhwal University, Srinagar, Uttarakhand, India in 1997 and the M.Sc. (Physics) degree from University of Roorkee, India in 1999 Post Graduate College, Gopeshwar (Chamoli) since 2005 His current research interests are Multiferroics, and lead free ferroelectric materials for device applications. He is actively engaged in teaching and research since last 36 years. His major field of research is in the area of dielectric materials ferroelectric perovskites. He has produced a dozen of Ph.D. scholars and more than 70 research papers are to his credit in this field
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
