Abstract
In this work, we present a simulation study for p-type doping effect on the performance of a photovoltaic organic solar cell based on P3HT: ICBA. Thus, numerical simulations are investigated on ITO/PEDOT: PSS /P3HT: PCBM/Ca/Al structure with AMPS-1D (Analysis of Microelectronic and Photonic Structures the simulation one dimension) software. Indeed, the p-type doping is considered as an original approach for the efficiency improvement of the organic solar cell. However, we noticed that this improvement is only valid for the active layer devices characterized by hole mobility μp less than 1E-3 cm2V–1s–1. Furthermore, an efficiency peak of 5.856% is obtained for doping density of 1E17 cm-3 corresponding to an improvement of 25.9%. Moreover, the obtained results remain in good agreement with those experimentally reported in literature.
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