Abstract
Abstract As an important analytical method for thin film growth, spectroscopic ellipsometry plays an active role in investigating thin film growth mechanism of molecular beam epitaxial especially under in-situ and real-time environment. In this paper, the dynamic data presenting p-6P molecule film growth on mica substrates at different evaporation temperatures have been obtained under ultra-high vacuum by a self-designed in-situ and real-time spectroscopic ellipsometry system. It is shown that the strength of p-6P molecular ellipsometry signal increases as the amount of molecule deposited increases, and there is a negative characteristic peak at 3.9 eV, caused by electron transition of the p-6P molecule from the highest occupied molecular orbital to the lowest unoccupied molecular orbital, which can be considered to be an optical characteristics of p-6P molecule.
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