Abstract
Photothermal experiments using photoacoustic, IR radiometric and piezoelectric detection have been conducted on semiconductors and on metal samples as reference. For the metal samples the IR emissivity has been determined for differently treated surfaces by comparing the photoacoustic and the IR radiometry response. For semiconductor mixed crystals consisting of Zn 1-x Be x Te information on the composition dependence and depth variation of the IR optical properties has been deduced from combined measurements based on modulated IR radiometry and photoacoustics performed as a function of modulation frequency at one selected excitation wavelength. For the semiconductor mixed crystals, additionally, the optical absorption in the spectral range 350 nm to 900 nm has been determined.
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