Abstract
Combinatorial ion implantation techniques with mask and digital scanning systems were applied to study the effect of nitrogen on the optical property of ZnO thin films deposited by chemical vapor deposition. Nitrogen ions accelerated to 70 keV were implanted continuously in the range of 1×1014 to 6×1015 ions/cm2. After the annealing at 800 °C for 90 min, photoluminescence measurements revealed that the position of the peak of maximum intensity in the spectrum shifted from 528.0 to 560.4 nm as the N dose was changed from 1×1014 to 6×1015 ions/cm2. The behavior of visible emissions is discussed in terms of the effect of nitrogen ion implantation.
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