Abstract

Barium manganite (BaMnO3), a perovskite based material, has been studied extensively. BaMnO3 properties can be changed by doping different elements at manganese (Mn) lattice site. We have prepared BaMnO3 and BaMn1-xCrxO3 (x=0.1, 0.2, 0.3, 0.4, 0.5) by Microwave Synthesizer. Data obtained from Fourier Transform Infrared Spectroscopy (FTIR) that the band gap of pure BaMnO3 is less as compare to the Cr doped BaMnO3. It is also clear from the FTIR that the band gap decreased with increasing the concentration of chromium. Broaden peak at 3201 cm−1 correspond to the stretching vibration of hydroxyl group (OH or H2O). The peaks appear on 724, 863 and 974 cm−1 is corresponding to the stretching vibration of metal oxide (M-O) bonds in the BaMnO3. BaMnO3 have applications in memory storage devices.

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