Abstract
Results of photoluminescence (PL) studies of heterostructures with strongly strained InxGa1 − xAs quantum wells (QWs) are presented. It is shown that the dependence of the PL intensity on the QW thickness has a maximum whose position depends on the composition of the InxGa1 − xAs solid solution. The PL wavelength at the maximum intensity is 1.13 µm at a QW thickness of 60 µm at a QW thickness of 50 A for x = 0.39 and 0.42, respectively.
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