Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

N.G Galkin,K.N Galkin,E.A Chusovitin,S.A Dotsenko,,I.M Chernev,A.V Shevlyagin,D.L Goroshko,E.A Vinogradov,K.R Karimullin,M.G Gladush,A.V Naumov

doi:10.1051/epjconf/201713202006

Abstract

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

Highlights

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.12.6 eV is observed
Semiconductor monolithic and polycrystalline nanoheterostructures created on the base of embedded in silicon matrix the nanocrystals (NCs) of semiconducting silicides (E-FeSi2, CrSi2, h-CaSi2, Mg2Si), as well as Mg stannide-silicide NCs can have fundamentally new optical properties associated with confinement of electrons and excitons
In this paper systematically investigated the nucleation conditions of nanosize silicide’s islands of few transition and alkaline earth metals, as well as stannide and magnesium stannide-silicide by in situ method of differential reflectance spectroscopy, electron Auger spectroscopy and electron energy loss spectroscopy

Summary

Introduction

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.12.6 eV is observed. Semiconductor monolithic and polycrystalline nanoheterostructures created on the base of embedded in silicon matrix the nanocrystals (NCs) of semiconducting silicides (E-FeSi2, CrSi2, h-CaSi2, Mg2Si), as well as Mg stannide-silicide NCs can have fundamentally new optical properties associated with confinement of electrons and excitons.

Results

Conclusion