Abstract

Photocapacitive spectroscopy is used for the first time to study optical absorption in thin films of a-As2Se3 for optical photons with energies below the gap width. Photocapacitance spectra are obtained over energies of 0.83–1.94 eV and used to characterize the density of localized states in the tail of the valence band and in deep states of charged defects. Aging and illumination of the film are found to affect the level of optical absorption by deep centers.

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