Abstract
Photoluminescence (PL) measurements of 45 Å Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As single quantum wells (SQWs) with and without growth interruptions at hetero-interfaces have been carried out in order to qualitatively study the size and the density of two-dimensional (2D) clusters on the growing crystal surface at temperatures of 600 to 750°C. For SQWs grown on nominal (100) GaAs, the full width at half maximum (FWHM) of the PL spectra showed a maximum at a growth temperature of 650°C and shoulders were observed in the PL spectra of SQWs grown at 650 and 675°C with interruptions at the hetero-interface. For SQWs grown on vicinal (100) GaAs, the FWHM of the PL spectra showed an anisotropy with respect to the misorientation directions depending on the growth temperatures and growth interruption times. Possible growth modes at various temperatures are proposed, based on the results of the PL and surface morphology, considering a thermodynamic model of 2D clusters.
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