Abstract
In this work the application of photoacoustic technique (PA) for the study of recombination mechanisms in semiconductor substrates and heterostructures is briefly reviewed. A theoretical model which allows the investigation of nonradiative recombination time and surface recombination velocity was developed. We present the experimental values of such parameters obtained by fitting the theoretical curves to the experimental PA phase data for SiN:H/Si, AlGaAs/GaAs and InGaAsSb/GaSb single heterostructures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
