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Abstract
We report magnetotransport studies on microstructured ZnO film grown by pulsed laser deposition in N2 atmosphere on a-plane Al2O3 substrates and the effect of low energy H+-implantation. Non-linearity has been found in the magnetic field dependent Hall resistance, which decreases with temperature. We explain this effect with a two-band model assuming the conduction through two different parallel channels having different types of charge carriers. Reduced non-linearity after H+-implantation in the grown film is due to the shallow-donor effect of hydrogen giving rise to an increment in the electron density, reducing the effect of the other channel.
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