Abstract
Two new designs for a metamorphic buffer, which are modifications of the InxAl1 − xAs metamorphic buffer due to groups of layers with differing lattice parameters, are proposed and implemented. This makes it possible to affect the relaxation of the metamorphic buffer. The structural and electrical characteristics of the obtained metamorphic HEMT nanoheterostructures are also studied.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have