Abstract
Extreme ultraviolet (EUV) lithography has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10nm. Recently EUV pellicle introduction is required to improve particle level inside scanner for EUV mass production. We demonstrate that a new pellicle material, nanometer-thick graphite film (NGF), is one of the best candidates of EUV pellicle membrane. A NGF pellicle with excellent thermal (e≥0.4 @R.T, <100nm), mechanical (415MPa @~100nm), chemical and optical (24hrs durability under exposure of EUV/H2 at 4W/cm2 with pH2~5Pa) properties can be a promising and superb candidate for EUV pellicle membrane compared to Si pellicles with capping layers.
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