Abstract
Mullite (3Al2O3⋅2SiO2) has a low thermal expansion coefficient and low dielectric constant, so it is a favorable material for substrate applications. It is difficult, however, to sinter pure mullite ceramics even above 1700°C. Thus, mullite ceramics containing glass additives (Al2O3-MgO-SiO2 glass) which could be sintered at about 1600°C were fabricated and their properties were investigated. At about 90wt% of silica content in glass, the mullite ceramics has a low dielectric constant (5.9), high bending strength (210MPa) and low thermal expansion coefficient (3.5×10-6/°C). From electron diffraction analysis, sillimanite (Al2O3⋅SiO2) crystals were observed at boundaries of these ceramics. These ceramics showed little grain growth, responsible for their high bending strength. Substrate of mullite ceramics are suitable for mounting silicon devices.
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