Abstract
Abstract A p-type porous silicon MSM (metal-semiconductor-metal) photodetector has been fabricated and its performance investigated. Samples with different anodization times are compared and the optimum photoresponse is obtained from a sample etched for 3 min at an anodization current of 25 mA/cm2. The spectral response of the MSM photodetector is found to be similar to that of a Si PIN photodiode. A deep electron trap with activation energy Ea= 0.44–0.53 eV, capture cross section σ=2.6 × 10−16 −1.3 × 10−15 cm2 and trap concentration Nt = 5.4 × 1014 −3.5 × 1013 cm−3 is observed from the metal-oxide-porous silicon structure. The degradation of the photoluminescence intensity and the photocurrent response is presented. A thin silicon oxide film coating on the MSM photodetector is shown to improve the device stability.
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