Study of MOS and IGBT transistors at switching with variable duty cycle

Abstract

In this paper, the functionality of MOS and IGBT transistors is examined under identical working conditions, both in terms of command frequency and load circuit. A variable duty cycle and variable frequency signal generator is used to control transistors. Various electronic components and Arduino-UNO modules, as well as the 16×2 LCD screen, were used to create the signal generator. The control signal is amplified by a current amplifier to adapt the output voltage to the value required to control the transistors. The operation of MOS and IGBT transistors at various operating frequencies with resistive or inductive loads is compared. Thus, the communication times of the transistor capsules were determined at various operating temperatures. The temperature was determined indirectly by connecting a thermistor to the transistor capsule.