Abstract
Traps within semiconductor devices are crucial in determining the device performance. Identifying the root cause of trap generation necessitates a thorough investigation of the underlying micro-mechanisms. This study presents the current density–voltage (J-V) characteristic curves for devices employing HAT-CN/NPB as the interface material. The presence of traps in the devices is confirmed by fitting the power-law relationship J∝(V−Vi)m+1. Subsequent investigation employs the magnetic effect as a diagnostic tool, uncovering that the TPI process generates distinct substates, which markedly influence the device performance. The interaction between a trap-bound triplet exciton and a free polariton leads to the formation of double-state trions, thereby enhancing device luminous intensity. In contrast, the interaction of a free triplet exciton with a bound polariton yields quartet trions, which impede charge transport, as demonstrated by the analysis of magneto-conductance amplitude and positive and negative in this study. This manuscript integrates findings from the TPI process, photoelectric data, and magnetic effect data to elucidate the device response to traps.
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