Abstract
Comparing with conventional spreading resistance profiling and differential Hall effect (DHE) methods, the continuous anodic oxidation technique/DHE (CAOT/DHE) technique may achieve more reasonable profiles of carrier concentration nh(x), mobility muh(x), and resistivity rho(x) and more reasonable carrier dose and xj in Si substrate. It has been successfully used to study ultralow energy doping techniques including B beam-line implant and B2H6 plasma doping (PLAD). CAOT/DHE data support the fact that the devices fabricated by PLAD achieve improvement to those fabricated by beam-line implant because PLAD offered higher surface carrier concentration and carrier dose. CAOT/DHE data quantitatively verify the so-called solid solubility limit activation theory - the carrier profiles and secondary ion mass spectrometry (SIMS) B impurity profiles under BSS are very well consistent on both beam-line and PLAD implants. As a cheaper and standard metrology, the SIMS/ARXPS method with the solid solubility limit activation theory may be used to quantitatively or semiquantitatively study the doping and activation processes.
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