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Abstract
In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.
Highlights
Recent integrated circuit (IC) technology used millions of transistors on a small of silicon die [1]
Germanium has very favourable properties as a semiconductor, when compared to silicon whereby germanium has a much higher mobility of electrons and holes than silicon [10]. This has motivated the needs of the silicon germanium (SiGe) islands on Si to investigate its optical performance towards the visible spectrum compared with the bulk Ge using SILVACO (TCAD)
It is shown that the SiGe islands exhibited higher energy band gap (1.5eV) compared to bulk Ge (0.8eV)
Summary
Recent integrated circuit (IC) technology used millions of transistors on a small of silicon die [1]. Germanium has very favourable properties as a semiconductor, when compared to silicon whereby germanium has a much higher mobility of electrons and holes than silicon [10] This has motivated the needs of the SiGe islands on Si to investigate its optical performance towards the visible spectrum compared with the bulk Ge using SILVACO (TCAD). Using SILVACO tools, the optimum SiGe island growth condition can be obtain while the expected performance of the device can be foresee and the time for fabrication can be optimized [9]. In this project, different sizes of SiGe islands and bulk Ge (for comparison) on Si substrate were simulated. The analysis and comparison of structural, optical and electrical characteristic between SiGe island and bulk Ge devices on Si substrate MSM photo detector were presented
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