Abstract
Hall coefficient, photoconductivity and photoconductive relaxation measurements have been carried out on vacuum-evaporated air-exposed SnSe films in the temperature range 300-130K to probe into the mechanism of photoconduction in these films. The results have been explained by the trapping of majority carriers in the grain boundary region. The barrier height estimated from the temperature variation of the photorelaxation time is of the order of 0.16 eV, which agrees well with the values obtained from the temperature variation mobility as well as from the temperature variation of steady-state excess photoconductivity. The value of the trap density obtained from this analysis is of the order of 2*1025 m-3.
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