Abstract
We carried out a systematic study of electronic and local structures of Bi in topological insulating materials (Bi1-xSbx)2Te3 (0 < x < 0.6). X-ray absorption near-edge structure and extended X-ray absorption fine structure (EXAFS) measurements were used to extract information about the electronic and local structures around Bi. Analysis of the data revealed that Sb atoms were substituted for Bi sites within the quintuple layers, which showed a trivalent character. The EXAFS measurements provided the local structure parameters in terms of the bond distances and coordination number for the different shells. This information is useful in understanding and correlating the bulk topological insulating states with structural parameters in these compounds.
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