Abstract

The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies) of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6) in form of bulk and thick film was measured. A new approach for determination of complex permittivity (?? and ???) in the frequency range 8-12GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR), was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6). The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

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