Abstract
Nanosphere lithography is well suited for quick and easy formation of ordered structures on the entire silicon wafer. After coating of close packed mask of spheres, they must be reduced in diameter. In various studies, the main method used for spheres diameter reducing is dry etching using capacitively coupled plasma (CCP) mode. In this paper, we present the possibility of spheres etching using inductively coupled plasma (ICP) mode, comparing the results obtained with CCP mode. A strong degradation of the spheres morphology was demonstrated at CCP mode, while the degradation effect was not sufficient using ICP mode. However, the effect of spheres migration over the silicon surface during ICP etching was observed. A preliminary thermal annealing of spheres allows one to avoid this effect. Finally, a technology of reducing the spheres size with minimal degradation and preserving the original spherical geometry was developed.
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