Abstract
Recently, the range of crystal materials used in industrial microelectronics has significantly increased. Lithium niobate single crystals are most often used in integrated optics, due to the high values of optical and electro-optical coefficients. An integral-optical circuit based on a lithium niobate single crystal is a key element in the production of local high-precision fiber-optic gyroscopic devices used in civil and military aviation and marine technologies. In the process of production of an integral-optical circuit, the most labor-intensive operations are mechanical processing, such as lapping and polishing. Technological problems that arise while performing these operations are due to the physical and mechanical properties of the material, as well as target surface finish. This work shows the possibility to achieve the required surface quality of lithium niobate single crystal plates by mechanization of lapping and polishing process in this article.
Highlights
Recently, the range of crystal materials used in industrial microelectronics has significantly increased
MatIenritahl eanpdrMeseetnhot dsstudy, an attempt has been made to improve the efficiency of dainmdeLnpNsoiSolCinsspholianftetghsebafywteomrrdkeipacimhecaoenndiiszci3un6tgt×intgh3.ew04epr×reouc1s2ee.sd8s4aosmfsmaamb(prl al×essiwvine×efxiphne)i.rsimhPirenoncgtess.osTfinhtgehleoefnegtnhthde s lithium niobate single crystals (LNSC) eTnodafaccheiseovfeththeeplsaatems ew, atshceaerrfifeedctouotf itnhpeatcrkaajgeecstoorfy4–o5fptioeocelsoinn tahsepeqcuiaallfiitxytuoref sounrface is tghaetfiendisahnindg qanudanpotilfisiheidngbmy atchheindee(Ipntnhovoaftitohne2d00eRfoTrwmine,dRelmayeet,rI.taFluy)r.tThheermneocerses,artyhe possi parcehssiuerveionngththe etoorel–qwuoirrkesdursfuacrefacocnetaqcut walaistygeonfertahteedLaNndScChapnglaedtebsybcaalsiberdatoednwtheieghmtse. chaniz the polishing process is analyzed and quantitative and qualitative indicators ar lished
During the abrasive finish processing of crystalline materials the total depth of the deformed layer by lapping and the minimum polishing time required for its removal was calculated
Summary
The range of crystal materials used in industrial microelectronics has significantly increased. While processing crystalline materials like germanium silicon and glass, the resulting microcracks penetrate to a certain depth from the surface and form a deformed subsurface layer [6,7]. There are some differences in the operation of free and fixed abrasive grains which significantly influence the mechanism of action, Materials 2021, 14, 4968 further development and refinement [6,8,9,10,11,12,13]. There are some differen2ceofs13in the op of free and fixed abrasive grains which significantly influence the mechanism o the size of the deformed layer, and the micro relief of the processed surface [9,1 tsshttueudsdiiezisees[o1[f,91t,h,19e0,,1d106e],f,1oi6rtm]w,eaidts wlfaoyuaensrd,faotnhudanttdthheethmraaitctirotohorefetlrhieaeftdiooef ptohtfhetFphroeofcdtehseespedtdehfsouFrrmfoaefcdetha[9ne,d1d4h,e1fo5of].rthmIneed and rreellieief flalyaeyrserfosrfvoarrivoaursigoruasdegsroafdoepstiocaflogplatsiscaanldgmlaisnseraanlsdwmithinaesriamlislawr bitrhittalescirmiteirliaornbrittle c rreemmaainisnaslmalomstocsotncstoannts:tFa/nht:=FK/h≈=4K(F≈ig4ur(eF1i)g. MatIenritahl eanpdrMeseetnhot dsstudy, an attempt has been made to improve the efficiency of dainmdeLnpNsoiSolCinsspholianftetghsebafywteomrrdkeipacimhecaoenndiiszci3un6tgt×intgh3.ew04epr×reouc1s2ee.sd8s4aosmfsmaamb(prl al×essiwvine×efxiphne)i.rsimhPirenoncgtess.osTfinhtgehleoefnegtnhthde s LNSC eTnodafaccheiseovfeththeeplsaatems ew, atshceaerrfifeedctouotf itnhpeatcrkaajgeecstoorfy4–o5fptioeocelsoinn tahsepeqcuiaallfiitxytuoref sounrface is tghaetfiendisahnindg qanudanpotilfisiheidngbmy atchheindee(Ipntnhovoaftitohne2d00eRfoTrwmine,dRelmayeet,rI.taFluy)r.tThheermneocerses,artyhe possi parcehssiuerveionngththe etoorel–qwuoirrkesdursfuacrefacocnetaqcut walaistygeonfertahteedLaNndScChapnglaedtebsybcaalsiberdatoednwtheieghmtse. chaniz the polishing process is analyzed and quantitative and qualitative indicators ar lished
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