Abstract
Iridium (Ir) is comprehensively investigated for application in Ferroelectric random access memory. Ir thin films are treated at different temperature and examined to investigate the effects of thermal processes which are unavoidable in fabrication of ferroelectric films. Stress in as deposited Ir films is found to be relieved by 400°C baking in the air. IrO2 starts to form when the temperature reaches 600°C. Then IrO2/Ir electrode formed by 650°C rapid thermal process (RTP) and Ir are used as bottom electrodes in sol-gel lead zirconium titanate (PZT) based capacitors. Effects of bottom electrodes on PZT films are investigated and electrical properties of sol-gel PZT based capacitors including polarization, fatigue and leakage are studied. Capacitors using IrO2/Ir bottom electrodes are found to have larger remnant polarization and better fatigue property. Mechanism for fatigue is studied based on oxygen vacancies according to the effects of IrO2. Leakage performance is investigated from the viewpoint of electrode work functions, which are proposed to be principal factor affecting leakage performance. Besides, surface conditions of the electrodes are examined. Roughness increase and hillock formed at the surface of Ir during thermal process may be another reason to affect leakage current.
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