Abstract
AbstractThe IR absorption and photoconductivity spectra of a double donor (TDD) family with ionization energies less than 70 meV in silicon were investigated using Fourier transform spectroscopy with a resolution down to 0.25 cm–1. The values of line frequencies, widths, splitting and absorption cross sections for transitions from the ground to p‐states (including high‐excited states) were obtained. Determination of absorption cross sections was made using Hall data and concerted changes of boron and TDDi concentrations caused by neutralization of impurities under band gap illumination.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
