Abstract
The effects of ionizing radiation in large-geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon-silicon dioxide and the silicon dioxide-metal (chromium and aluminum) interfaces were measured before and after irradiation in a Co60 gamma cell. It was determined that the measured barrier energy heights may be considerably reduced by radiation-induced oxide charge. The internal photoemission technique also provided significant information concerning the effects of impurities in the oxide and the related radiation hardness of the oxide layer. Oxide layers doped with chromium ions showed significant electron trapping at two discrete energy levels (3.4 and 3.8 eV). Samples exhibiting the 3.4 eV level showed great radiation hardness, while those with only the 3.8 eV peak were very radiation soft. The information obtained, using the internal photoemission technique, has provided considerable insight into the mechanisms and fabrication processes associated with radiation-hardened MOS devices.
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