Abstract
This paper describes a method of obtaining thin films of material by ion doping of a precleaned substrate under conditions of a jet diaphragm discharge in vacuum in the magnetogasdynamic regime with an electromagnetic method of accelerating the resulting discharge products. The implantation of carbon and fluoride ions into the surface area of a substrate made from single-crystal silicon with an ion energy of Ei=37.4keV is considered as an example. Based on an analysis of the XPS spectra, it is shown that, besides the chemical elements from the substrate material (silicon Si 2p with binding energy 99.5 eV), the doped film contains chemical elements from the plasma-forming material of the diaphragm (carbon C 1s with binding energy 285 eV and fluorine F 1s with binding energy 686 eV), with a smooth decrease of their atomic concentration as the distance from the surface increases.
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