Abstract
Intrinsically carbon-doped AlGaAs layers were grown on semi-insulating (0 0 1) GaAs (on axis) and Ge (6° misoriented) substrates using tertiarybutylarsine (TBAs). Growth temperatures from 512 to 630 °C were studied and V/III ratios were varied in the range from 9.3 to 0.8. Carrier concentrations saturate at a value of 6×10 19 cm −3. Multi-junction solar cell tunnel diodes were grown, using carbon doping, in different configurations. The highest obtained peak current density was 17.3 A/cm 2 with the tunnel junction embedded in GaAs layers. Using this junction InGaP/GaAs tandem solar cells were grown on 4″ Ge which yield a maximum efficiency of 24.3% under the AM1.5 g spectrum.
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