Abstract
Modulation-doped GaAs/AlGaAs heterostructures have been studied by photoreflectance spectroscopy. The spectra at room temperature show Franz–Keldysh oscillations associated to the substrate–buffer layer interface. The built-in electric field magnitude calculated from these oscillations is related with the two-dimensional electron gas (2DEG) mobility. In addition we observed two signals associated to the GaAs capping layer and to the 2DEG, respectively.
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