Abstract
Abstract The interfacial change of a vapor-deposited TPD (N,N′-diphenyl-N,N′-bis-(3-methylphenyl)-[1,1′-biphenyl]-4,4′-diamine) and Alq3 (Tris-(8-hydroxyquinoline) aluminum) bilayer film was characterized by photoluminescence (PL) in the temperature range from room temperature to 80 °C under an ambient atmosphere. The TPD and the Alq3 film are widely used as a hole transport and an emitter layer, respectively, in organic electroluminescent (EL) devices (ITO/TPD/Alq3/metal). As the substrate plate, a slide glass was used in this work. In an Alq3/TPD bilayered structure, two PL bands from Alq3 and TPD were observed and the relative PL intensity of Alq3 to that of TPD was increased with time. The change was accelerated with increasing temperature. In case of a co-deposited single layer of TPD and Alq3, an Alq3 PL band predominated and, in addition, the PL intensity was not changed remarkably with increasing temperature. These results support that the PL change observed for the Alq3/TPD bilayered structure is ascribed to quenching of photo-excited TPD by Alq3 as a result of diffusion of the components into each other layer.
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