Abstract
A novel experimental method for interface trap characterization in MOSFETs is proposed. The method is based on a detailed time domain analysis of the substrate and source/drain currents, called split-currents, and includes the nonsteady state behaviour of the electron and hole emission processes from the interface traps when large triangular signals are applied to the gate. The interface trap density profiles as well as their capture cross sections in a relatively wide region of the silicon band gap are determined and compared to those obtained from the conductance technique adapted recently to be applied on relatively short channel MOSFETs.
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